Method of manufacturing light emitting device

ABSTRACT

A method for manufacturing a light emitting device includes providing an intermediate member including: at least one light emitting element that includes a plurality of electrodes arranged at a same surface side thereof, and a covering member covering the at least on light emitting element such that at least a portion of a surface of each of the plurality of electrodes is exposed; forming a metal layer that continuously covers the exposed portion of each of the electrodes and the covering member; and removing a portion of the metal layer by irradiating the metal layer with laser light to form a plurality of external connection electrodes that are spaced apart from each other, each of the plurality of external connection electrodes having an area larger than an area of respective one of the plurality of electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application Ser. No.15/385,553, filed on Dec. 20, 2016, which is based on and claimspriority of Japanese Patent Application No. 2015-248382 filed on Dec.21, 2015, and Japanese Patent Application No. 2016-185078 filed on Sep.23, 2016, the contents of which are hereby incorporated by reference intheir entireties.

BACKGROUND

The present disclosure relates to a method of manufacturing a lightemitting device.

A small-sized light emitting device is known in which, instead ofproviding a housing for accommodating a light emitting element, lateralsurfaces and a lower surface of a light emitting element are coveredwith a seal member containing a reflective material and platedelectrodes are provided to be in contact with lower surfaces of bumpelectrodes of the light emitting element and a lower surface of the sealmember (see, for example, JP 2012-124443 A).

SUMMARY

Formation of plated electrodes requires providing a mask or the like,which leads to an increase in the number of steps in the method ofmanufacturing the light emitting device.

Certain embodiments of the present invention include the followingfeatures.

A method of manufacturing a light emitting device according to oneembodiment includes providing an intermediate member including at leastone light emitting element each includes a plurality of electrodesarranged on a same surface side thereof and a covering member coveringthe at least one light emitting element so as to expose at least aportion of a surface of each of the plurality of electrodes, forming ametal layer continuously covering an exposed portion of the plurality ofelectrodes and the covering member, and remove a portion of the metallayer by irradiating the metal layer with laser light to form aplurality of external connection electrodes spaced apart from eachother, each of the plurality of external connection electrodes having anarea larger than an area of respective ones of the plurality ofelectrodes.

With these features, a small-sized light emitting device can be obtainedeasily.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic perspective view of a light emitting deviceaccording to a first embodiment when viewed obliquely from an upperside.

FIG. 1B is a schematic perspective view of the light emitting deviceaccording to the first embodiment when viewed obliquely from a lowerside.

FIG. 10 is a schematic cross-sectional view taken along the line I-I ofFIG. 1A.

FIGS. 2A to 2E are schematic cross-sectional views illustrating a methodof manufacturing the light emitting device according to the firstembodiment.

FIG. 3 is a schematic plan view illustrating the method of manufacturingthe light emitting device according to the first embodiment.

FIG. 4 is another schematic plan view illustrating the method ofmanufacturing the light emitting device according to the firstembodiment.

FIG. 5A is a schematic perspective view of a light emitting deviceaccording to a first variant example of the first embodiment when viewedobliquely from an upper side.

FIG. 5B is a schematic perspective view of the light emitting deviceaccording to the first variant example of the first embodiment whenviewed obliquely from a lower side.

FIG. 5C is a schematic cross-sectional view taken along the line II-IIof FIG. 5A.

FIG. 6 is a schematic plan view illustrating the method of manufacturingthe light emitting device according to the first variant example of thefirst embodiment.

FIG. 7 is another schematic plan view illustrating the method ofmanufacturing the light emitting device according to the first variantexample of the first embodiment.

FIG. 8A is a schematic perspective view of a light emitting deviceaccording to a second embodiment when viewed obliquely from an upperside.

FIG. 8B is a schematic perspective view of the light emitting deviceaccording to the second embodiment when viewed obliquely from a lowerside.

FIG. 8C is a schematic cross-sectional view taken along the line III-IIIof FIG. 8A.

FIGS. 9A to 9E are schematic cross-sectional views illustrating a methodof manufacturing the light emitting device according to the secondembodiment.

FIG. 10 is a schematic plan view illustrating the method ofmanufacturing the light emitting device according to the secondembodiment.

FIG. 11 is another schematic plan view illustrating the method ofmanufacturing the light emitting device according to the secondembodiment.

FIG. 12A is a schematic perspective view of a light emitting deviceaccording to a third embodiment when viewed obliquely from an upperside.

FIG. 12B is a schematic perspective view of the light emitting deviceaccording to the third embodiment when viewed obliquely from a lowerside.

FIG. 12C is a schematic cross-sectional view taken along the line IV-IVof FIG. 12A.

FIG. 13 is a schematic cross-sectional view illustrating a method ofmanufacturing the light emitting device according to the thirdembodiment.

FIG. 14A is a schematic perspective view of a light emitting deviceaccording to a fourth embodiment when viewed obliquely from an upperside.

FIG. 14B is a schematic perspective view of the light emitting deviceaccording to the fourth embodiment when viewed obliquely from a lowerside.

FIG. 14C is a schematic cross-sectional view taken along the line V-V ofFIG. 14A.

FIGS. 15A to 15E are schematic cross-sectional views illustrating amethod of manufacturing an intermediate member according to the fourthembodiment.

FIGS. 16A to 16E are schematic cross-sectional views illustrating amethod of manufacturing the light emitting device according to thefourth embodiment.

FIG. 17 is a cross-sectional view of a light emitting device accordingto another variant example of the first embodiment.

FIGS. 18A to 18E are schematic cross-sectional views illustrating amethod of manufacturing the light emitting device shown in FIG. 17.

FIG. 19 is a schematic cross-sectional view of a light emitting deviceaccording to another variant example of the first embodiment.

FIGS. 20A and 20B are schematic cross-sectional views illustrating amethod of manufacturing the light emitting device shown in FIG. 19.

FIG. 21 is a schematic bottom view of the light emitting deviceaccording to the first variant example of the first embodiment.

FIG. 22 is a schematic bottom view of the light emitting deviceaccording to the first variant example of the first embodiment.

DETAILED DESCRIPTION

Certain embodiments of the present invention will be described in detailbelow with reference to the accompanying drawings. In the descriptionbelow, the terms indicative of specific directions or positions (e.g.,upper, lower, right, left, and other words including these words) areused as appropriate. The use of these terms is to make the understandingof the present invention easy with reference to the drawings, and doesnot limit the technical scope of the present invention by theirmeanings. The same reference numerals will be used throughout thedrawings to refer to the same or like parts or members. Resin memberssuch as a first light-transmissive member, a second light-transmissivemember, and a covering member, will be described using the samerespective names regardless of modification, solidification, hardening,and before and after singulation. That is, a member that can exist indifferent states depending on the stage of steps will be constantlydescribed by the same name, for example, in the case where the memberbeing liquid before molding is molded into a solid and such solid isdivided into a different shape.

In one embodiment, a method is provided for manufacturing a lightemitting device that includes at least one light emitting element with aplurality of electrodes, a covering member covering the light emittingelement, and external connection electrodes each connected to a portionof the plurality of electrodes exposed from the covering member, whileeach of the plurality of electrodes further includes a portion coveredby the covering member. The method includes forming a metal layercontinuously covering the plurality of electrodes and the coveringmember, and remove a portion of the metal layer by irradiating a portionof the metal layer on the covering member located between the pluralityof electrodes with laser light to form the external connectionelectrodes each having an area larger than an area of respective one ofthe plurality of electrodes.

Irradiation of the metal layer with the laser light causes laserablation, which allows for removing a portion of the metal layer on anintermediate member. In this manner, the metal layer is patterned, sothat the metal layer can serve as the external connection electrodes.The laser ablation is a phenomenon in which irradiation of laser lightwith intensity of a certain value (threshold) or greater to a surface ofa solid allows the irradiated portion of the surface to be removed.Using the laser ablation allows for patterning the metal layer withoutusing a mask or the like.

First Embodiment

FIGS. 1A to 10 illustrate a light emitting device 1 produced by a methodof manufacturing a light emitting device according to a firstembodiment. The light emitting device 1 includes a light emittingelement 10, a covering member 20, light-transmissive members 30 and 40,and a plurality of external connection electrodes 50. The light emittingelement 10 includes a layered structure body 10 a includingsemiconductor layers and a pair of electrodes 10 b disposed at a surfaceof the layered structure body 10 a (e.g., the lower surface, as shown inFIG. 10).

The covering member 20 covers the lower surface and lateral surfaces ofthe light emitting element 10 such that a surface of each of the pair ofelectrodes 10 b is exposed. The covering member 20 can be formed in one,or in two or more steps. Regarding the covering member 20 formed througha plurality of steps, the illustration of the boundaries between layersin the covering member 20 formed in each step may be omitted.

The light-transmissive members include a first light-transmissive member30 that covers an upper surface of the light emitting element 10 (whichrefers to the upper surface in FIG. 10, and is opposite to a surfaceprovided with electrodes), and a second light-transmissive member thatcovers the lateral surfaces of the light emitting element 10 (whichrefers to left and right surfaces of the light emitting element in FIG.10). Each of the external connection electrodes 50 is respectivelyconnected to a respective one of the plurality of the electrodes 10 b ofthe light emitting element 10. Each of the external connectionelectrodes 50 has an area larger than that of the respective one of theelectrodes 10 b connected thereto. In other words, the externalconnection electrodes 50 are arranged to continuously cover theelectrodes 10 b of the light emitting element and the covering member20.

Such a light emitting device 1 can be formed through the steps of:

(1) providing an intermediate member that includes at least one lightemitting element including a plurality of electrodes arranged on a samesurface side thereof, and a covering member that covers the lightemitting element so as to expose at least a portion of a surface of eachof the pair of electrodes;(2) forming a metal layer that continuously covers the exposed portionof the pair of electrodes and the covering member; and(3) irradiating the metal layer with laser light to remove a part of themetal layer to form a plurality of external connection electrodes thatare spaced apart from each other, each of the plurality of externalconnection electrodes having an area larger than an area of a respectiveone of the plurality of electrodes.

Each step will be described in detail below with reference to FIGS. 2Ato 2E.

Providing Intermediate Member

As illustrated in FIG. 2A, an intermediate member 11 is provided thatincludes the light emitting elements 10 and the covering member 20. Eachof the light emitting elements 10 includes the layered structure body 10a and the plurality of electrodes 10 b arranged at the same surface sideof the layered structure body 10 a. The covering member 20 covers thelight emitting elements 10 to expose a portion of each of a surface ofeach of the plurality of electrodes 10 b. One intermediate memberincludes a plurality of light emitting elements 10. The light emittingelements are arranged regularly in the longitudinal and lateraldirections and integrally covered by the covering member 20. Note thatfor convenience in description, in each of the figures illustratingsteps (e.g., FIGS. 2A to 2E), two light emitting elements areillustrated. However, any number of light emitting elements may beemployed.

A distance between the light emitting elements can be selected asappropriate, according to the size of a light emitting device to beobtained, the size of the light emitting element, or the like. In viewof cutting and singulating of the coating member in a subsequent step,the light emitting elements is arranged also considering the width of aportion to be removed by cutting (the width of a cutting edge) or thelike.

In FIG. 2A, the intermediate member 11 is shown that includes the firstlight-transmissive member 30 disposed on a lower surface of each of thelight emitting elements 10 (the lower surface is opposed to the surfaceprovided with the electrodes) and the second light-transmissive member40 disposed on the left and right lateral surfaces of the light emittingelement 10 in a cross-sectional view. However, these light-transmissivemembers may be omitted. The intermediate member 11 is disposed on asupport member S1 such that a surface of the intermediate member 11 notprovided with the electrodes 10 b (in FIG. 2A, a surface provided withthe first light-transmissive member 30) faces the support member S1.

Forming Metal Layer

Next, as shown in FIG. 2B, a metal layer 150 is formed to continuouslycover the exposed parts of the pair of electrodes 10 b and the coveringmember 20. The metal layer 150 can be formed by a sputtering method, avapor deposition method, an atomic layer deposition (ALD) method, ametal organic chemical vapor deposition (MOCVD) method, aplasma-enhanced chemical vapor deposition (PECVD) method, an atmosphericpressure plasma deposition method, or the like.

Forming External Connection Electrode

In the first embodiment, the step of forming the external connectionelectrodes includes a sub-step of irradiating with laser light and asub-step of singulating.

As shown in FIG. 2C, the metal layer 150 is irradiated with laser light.More specifically, in FIG. 2C, a laser-light irradiation region L1 ofthe metal layer located between the plurality of electrodes of each ofthe light emitting elements 10 is irradiated with the laser light. FIG.3 is a schematic plan view corresponding to FIG. 2C. In, FIG. 3, each ofthe laser-light irradiation regions (indicated by gray portions) L1includes not only a region between the plurality of electrodes 10 b ofthe light emitting element, but also a region above the covering memberin an extending direction of the region between the plurality ofelectrodes 10 b. Laser light can be irradiated continuously further to aregion of the metal layer located between a plurality of electrodes ofadjacent light emitting element. Arrangement of the light emittingelements 10 with regularity allows laser light to be easily appliedcontinuously between the electrodes of the plurality of light emittingelements.

The laser-light irradiation region L1 has a width that is substantiallythe same width as that between the electrodes 10 b of the light emittingelement. Portions of the metal layer 150 located in the laser-lightirradiation region L1 are removed by the laser ablation. In this manner,as illustrated in FIG. 2D, portions of the covering member 20 betweenthe pair of electrodes 10 b of the light emitting element are exposed.

Continuously or sequentially transferring an irradiation spot on amember allows the metal layer to be irradiated with laser light. Theirradiation of the laser light may be continuous irradiation or pulseirradiation. The intensity of the laser light and the diameter andscanning speed of an irradiation spot can be selected in view of thermalconductivity of each of the covering member and metal layer and adifference in thermal conductivity between them so as to cause laserablation in the metal layer on the covering member.

For the wavelength of the laser light, a wavelength that allows a lowreflectance by the metal layer, more specifically, a wavelength thatallows reflectance of 90% or less, is preferably selected. For instance,a laser light with an emission wavelength in a green region (e.g.,around 550 nm), which is shorter than that in a red region (e.g., around640 nm), is preferably used, in the case where the outermost surface ofthe metal layer is made of Au. With this arrangement, ablation can beefficiently occurred, so that the manufacturability of the lightemitting device can be improved.

FIG. 4 is a schematic plan view corresponding to FIG. 2D. In the firstembodiment, the intermediate member 11 including the plurality of lightemitting elements 10 is used.

As shown in FIGS. 2D and 4, removing portions of the metal layer 150 byirradiating laser light allows the metal layer 150 to be separatedbetween the pair of electrodes 10 b in each of the light emittingelements 10. Meanwhile, the metal layer continuously covers electrodesof adjacent light emitting elements. That is, the metal layer 150 inthis state does not function as the external connection electrode.

Such continuous metal layer 150 and covering member 20 are cut to besingulated between the adjacent light emitting elements (along a cuttingline indicated by a dashed line X in FIG. 2D), and then the supportmember S1 is removed, so that the light emitting device 1 including theexternal connection electrodes 50 as shown in FIG. 2E can be obtained.

The obtained light emitting device 1 includes the metal layers 150serving as the external connection electrodes 50. The externalconnection electrodes 50 are respectively connected to each of theplurality of electrodes 10 b of the light emitting device.

Furthermore, each of the external connection electrodes 50 has an arealarger than that of respective one of the plurality of electrodes 10 b.Each of the external connection electrodes 50 obtained by cutting themetal layer 150 is formed to reach end portions of the bottom surface ofthe light emitting device 1, that is, to reach the lateral surfaces ofthe light emitting device 1. In this way, the external connectionelectrode 50 with the wider area can be obtained.

The external connection electrodes 50 each having an area larger thanthat of respective one of the electrodes 10 b of the light emittingelement allows for facilitating mounting of the light emitting device 1.With the manufacturing method in the first embodiment, such a lightemitting device can be easily obtained.

First Variant Example

Shown in FIGS. 5A to 5C is a light emitting device 2 produced by amethod of manufacturing a light emitting device according to a firstvariant example. In the first variant example, a step of irradiating aportion of the metal layer located over a region between the pluralityof electrodes of the light emitting element with laser light isdifferent from that in the first embodiment, but other steps are thesame as those in the first embodiment. The first variant example differsfrom the first embodiment in the width of the laser-light irradiationregion. Specifically, in the first embodiment, the width of thelaser-light irradiation region L1 is substantially the same as adistance between the electrodes 10 b of the light emitting element asshown in FIG. 3. On the other hand, in the first variant example shownin FIG. 6, a width W2 of a laser-light irradiation region L2 is widerthan a distance W1 between the plurality of electrodes 10 b of the lightemitting element. As illustrated in FIG. 7, irradiation of such a regionwith the laser light allows for removing a part of the metal layer 150that has a wider width than the distance between the electrodes 10 b ofthe light emitting element, so that the covering member 20 can beexposed from the removed part.

As shown in FIG. 6, portions of the metal layer 150 located on theelectrodes 10 b of the light emitting element are also irradiated withlaser light. However, in the portions of the metal layer 150 located onthe electrodes 10 b, laser ablation does not occur even if irradiatedwith laser light. This is because the covering member 20 and theelectrode 10 b of the light emitting element have differentheat-dissipation properties. That is, the electrode 10 b is made of ametal and has higher heat-dissipation properties, compared to thecovering member 20 containing a resin as a main component. This isbecause a metal has high thermal conductivity and high thermal radiationproperties. The output of a laser light for irradiation is selected tobe in a range that allows for causing laser ablation in portions of themetal layer 150 located on the covering member 20 while not causinglaser ablation in portions of the metal layer 150 located on theelectrodes 10 b.

This arrangement allows the laser light to remove portions of the metallayer 150 and not to remove other portions the metal layer 150 to remainand serve as external connection electrodes 50 a. In other words, thelaser-light irradiation region does not coincide with a removal regionof the metal layer 150, so that the external connection electrodes 50 aare formed in the laser-light irradiation region.

Irradiating the laser light to the portions of the metal layer 150located on the electrodes 10 b of each of the light emitting elements toremove these portions as well as the portions of the metal layer 150located on the covering member 20 allows for increasing a distancebetween the external connection electrodes 50 except for the portionslocated on the electrodes 10 b of the light emitting element. Forexample, even in the case where the distance between the plurality ofelectrodes 10 b of the light emitting element is small, the distancebetween the external connection electrodes 50 except for portionslocated on the electrodes 10 b of the light emitting element can beincreased. With this structure, the possibility of occurrence of ashort-circuit due to spread of solder when mounting the light emittingdevice on a secondary substrate or the like can be reduced. As shown inFIG. 21, when electrodes 10 b of a light emitting element 10 havedifferent shapes, in particular, when the electrodes 10 b of the lightemitting element have different shapes at portions facing each other,irradiating regions including these differently-shaped portions withlaser light can form the external connection electrodes 50 intodifferent shapes. For example, as illustrated in FIG. 21, in the casewhere the electrodes 10 b of the light emitting element include anelectrode 10 b on the left side having a rectangular shape and anelectrode 10 b on the right side having a shape with two recesses in aplan view, irradiating a region including a portion or an entirety ofthe recessed parts with the laser light allows the external connectionelectrodes 50 a to have a shape similar to those of the electrodes 10 bof the light emitting element. With this configuration, the polaritiesof the electrodes can be easily identified.

Alternatively, as indicated by gray portions in FIG. 22, the externalconnection electrode may include a recess 501 in the outer periphery ofthe lower surface of the light emitting device 1 a at a portion on anouter lateral surface side. For example, in the lower surface of thelight emitting device 1 a, the recess 501 is provided in peripheries ateach of which one external connection electrode is disposed.Specifically, in the light emitting device 1 a shown in FIG. 22, twoexternal connection electrodes 50 are arranged laterally on the left andright sides. Further, the recess 501 is provided at a right periphery ofthe external connection electrode 50 on the right side. Similarly,another recess 501 is provided at a left periphery of the externalconnection electrode 50 on the left side.

In these recesses 501 of the external connection electrodes 50, thecovering member 20 is exposed, similarly to a region between the twoexternal connection electrodes 50. Thus, in the lower surface of thelight emitting device 1 a shown in FIG. 22, one portion of coveringmember 20 continuously extending between the upper periphery to thelower periphery at a center region and two portions of the coveringmembers 20 contact with the right periphery and left periphery,respectively, are exposed.

With such recesses 501 in portions of the external connection electrodes50, the area of the external connection electrode to be in contact witha solder or the like can be decreased by the area of the recess.Furthermore, with the recesses on the outer lateral surface side of thelight emitting device, the length of the external connection electrodearranged closer to the respective outer lateral surface can beshortened. That is, with the recess, a portion of the outer periphery ofeach of the external connection electrodes can be arranged spaced awayfrom the corresponding outer lateral surface of the light emittingdevice. With this shape, when the light emitting device is mounted on asecondary substrate with a solder or the like, gas generated directlyunder the light emitting element 10 can be easily discharged to theoutside. Accordingly, generation of voids can be suppressed. The lightemitting device and the secondary substrate have different thermalexpansion rates, which may cause breakage of the light emitting devicedue to the thermal shock or the temperature cycle. However, the recessesprovided in a portion of each of the external connection electrodes 50allows for decreasing the area of each of the external connectionelectrodes bonded to the substrate via a solder, which can decrease thestress applied to the bonded parts, so that breakage of the lightemitting device can be prevented.

Furthermore, such recesses 501 provided in the parts of the externalconnection electrodes 50 allows for reducing the size of portions of themetal film to be cut in singulation. With this, cutting can befacilitated. Such recesses 501 can be formed by irradiating portions ofthe metal film with the laser light to cause laser ablation and thusremoving the metal film in these portions.

The size, position, shape, etc. of the recess 501 of the externalconnection electrode 50 may be appropriately selected. For example, inFIG. 22, one recess 501 is defined in a rectangular shape in theexternal connection electrode 50. The number of recesses 501 defined ineach external connection electrode 50 may be plural, that is, two ormore. The recess 501 can be defined with a polygonal shape, such as atriangular shape, a circular shape, an elliptical shape, or acombination thereof. Referring to FIG. 22, the recesses 501 are eachdisposed at the center in the vertical direction of FIG. 22. That is,each of the recesses is defined at the center of one periphery of thelight emitting device. The recesses may be defined in positions offsetfrom the center of the periphery of the light emitting device. Therecesses can be defined at either or both of the two external connectionelectrodes. Preferably, the recesses 501 are respectively formedsymmetrically on the left and right sides with the same size and shape.

Such recesses defined from the outer periphery of the externalconnection electrode can also be provided in other embodiments.

Second Embodiment

In FIGS. 8A to 8C, a light emitting device 3 produced by a method ofmanufacturing a light emitting device according to a second embodimentis shown. In FIGS. 9A to 11, a method of manufacturing the lightemitting device in the second embodiment is illustrated. In the secondembodiment, steps up to the step of the forming the metal layer is thesame as that in the first embodiment, but a step of forming externalconnection electrodes is different from that in the first embodiment.Specifically, the laser-light irradiation region includes a regionbetween the electrodes 10 b of each light emitting element and a regionto be cut for obtaining an individual light emitting device. That is,simply by the irradiation with the laser light, the individual externalconnection electrodes can be obtained from the metal layer. Thus, theexternal connection electrodes can be formed without cutting the metallayer in a subsequent step.

The light emitting device 3 obtained through the manufacturing method ofthe second embodiment differs from the light emitting device 1 in thatthe external connection electrodes 50 are spaced apart from therespective lateral surfaces of the light emitting device 3.

In the first embodiment, the laser light is irradiated to a portion ofthe metal layer 150 located over a portion between the electrodes 10 bof each of the light emitting elements and a portion of the metal layer150 on the covering member 20 at portions in the extension of a portionbetween the electrodes 10 b. That is, in the light emitting device 1obtained through the method in the first embodiment, as shown in FIG.1B, the covering member 20 is exposed in one strip region passingthrough the center of each of the light emitting devices 1 at its lowersurface. In contrast, as shown in FIG. 8B, in the light emitting device3 obtained in the second embodiment, the covering member 20 is exposednot only in one strip region passing through the center of the lowersurface of the light emitting device 3, but also at the outer peripheryof the lower surface thereof is removed.

Such a light emitting device 3 can be obtained by the manufacturingmethod shown in FIGS. 9A to 9E. For an intermediate member 31 preparedas shown in FIG. 9A and the metal layer 150 shown in FIG. 9B, materialssimilar to those in the first embodiment can be used. Then, as shown inFIG. 9C, a portion of the metal layer 150 located on the covering member20 between the electrodes 10 b of each of the light emitting elementsand a portion of the metal layer 150 located on the covering member 20at a region between the adjacent light emitting elements are irradiatedwith laser light. FIG. 10 is a plan view corresponding to FIG. 9C.

Laser-light irradiation regions L3 and laser-light irradiation regionsL4 are irradiated with the laser light.

Each of the laser-light irradiation regions L3 includes a portion of themetal layer 150 over a region between the electrodes 10 b of each of thelight emitting elements 10.

Each of the laser-light irradiation regions L4 includes a portion of themetal layer over a region between adjacent light emitting elements 10.

The portions of covering member 20 between adjacent light emittingelements 10 are to be cut in in a later singulation step. In the secondembodiment, the portion of the metal layer 150 located on the coveringmember 20 in a position to be cut is removed by laser ablation inadvance, which can divide the metal layer 150 to be spaced apart fromeach other at portions between adjacent light emitting elements asillustrated in FIG. 11. That is, at this time, the divided metal layersserve as the external connection electrodes. In this manner, dividingthe metal layer to be the external connection electrodes allows aportion of the covering member 20 to be present on the cutting line X.Thus, in the singulation, as shown in FIG. 9D, only the covering member20 is cut. With this arrangement, cutting can be easily performedcompared with the case of cutting both the metal layer and the coveringmember at the same time. Accordingly, the light emitting device 3singulated as shown in FIG. 9E can be obtained. Also in the secondembodiment and subsequent embodiments, similarly to the variant exampleof the first embodiment, the laser-light irradiation region can have awidth greater than the distance between the electrodes 10 b of each ofthe light emitting elements.

Third Embodiment

In FIGS. 12A to 12C, a light emitting device 4 produced by a method ofmanufacturing a light emitting device according to a third embodiment isshown. In the third embodiment, steps up to the step of forming themetal layer 150 are the same as those in the second embodiment.

Furthermore, the third embodiment is the same as the second embodimentin irradiating a portion of the metal layer 150 over a region betweenthe electrode of each of the light emitting elements and a portion ofthe metal layer 150 over a region between adjacent light emittingelements with the laser light. However, in the second embodiment, theportion of the metal layer removed by the irradiation with the laserlight is a portion to be divided into individual light emitting device.On the other hand, in the third embodiment, a portion of the metal layerlocated over a region between the light emitting elements at whichdivision is not to be performed is also removed by irradiation with thelaser light.

As shown in FIGS. 12A and 12B, the light emitting device 4 includes twolight emitting elements 10. Further, the light emitting device 4includes a pair of individual external connection electrodes 50 so thatthe light emitting elements 10 can be independently driven. That is, thelight emitting device 4 includes two pairs of external connectionelectrodes 50.

Such a light emitting device 4 can be manufactured in the same method asshown in the second embodiment until the step of irradiating laserlight. At the time of cutting the covering member 20 for singulation,the covering member 20 is cut at a position that allows a singulatedlight emitting device to include two pairs of external connectionelectrodes, which are formed to be independent from each other, in otherwords, so that at a position that allows the singulated light emittingdevice to include two light emitting elements, so that the lightemitting device 4 can be obtained. Alternatively, cutting can beperformed so that the singulated light emitting device includes three ormore light emitting elements. Also in the second embodiment, similarlyto the variant example of the first embodiment, the laser-lightirradiation region can have a width greater than the distance betweenthe electrodes 10 b of each of the light emitting element.

The light emitting device can include two or more light emittingelements 10 configured to be driven independently as in the thirdembodiment.

Alternatively, as shown in FIG. 13, a light emitting device 5 can have astructure in which two light emitting elements 10 are connected inseries. That is, the light emitting device 5 can be configured so thatone electrode 10 b of each of the two light emitting elements 10 isconnected to a respective one of external connection electrodes 50. InFIG. 13, of the two light emitting elements 10, an external connectionelectrode 50 b is provided over a right-side electrode 10 b on a lowersurface of a left-side light emitting element 10 and a left-sideelectrode 10 b on the lower surface of a right-side light emittingelement 10 in a bridged manner. In such a light emitting device 5, inthe manufacturing step illustrated in FIG. 13, preventing a portion ofthe metal layer on the covering member between the light emittingelements from being irradiated with the laser light allows for formingthe external connection electrode 50 b that continuously connects anelectrode 10 b of each of the two light emitting elements.

Fourth Embodiment

In FIGS. 14A to 14C, a light emitting device 6 manufactured by a methodof manufacturing a light emitting device according to a fourthembodiment. In FIGS. 15A to 15E, the method of manufacturing the lightemitting device in the fourth embodiment is illustrated. The lightemitting device 6 includes the external connection electrodes 50, eachof which includes an external connection portion 50 c at the lowersurface of the light emitting device 6, and an external connectionportion 50 d on the lateral surface of the light emitting device 6,which is the cut surface. The external connection portions 50 c and 50 dare continuous with each other.

In the fourth embodiment, an intermediate member is used in which acovering member has been cut and cut surfaces of the covering member areexposed. The cut surfaces may be surfaces exposed by cutting thecovering member in all positions to be cut, or alternatively surfacesexposed by cutting the covering member in a portion of each of thepositions to be cut. As shown in FIG. 15A, an intermediate memberincluding a plurality of light emitting elements 10 placed on thesupport member S1, the covering member 20 is cut before forming a metallayer. Thus, as shown in FIG. 15B, a plurality of intermediate members61 each including one light emitting element is formed. The obtainedintermediate members 61 are disposed on a support member S2 so as to bespaced apart from each other.

Next, the metal layer 150 is formed over the plurality of intermediatemembers 61 on the support member S2. As illustrated in FIG. 15C, themetal layer 150 is continuously formed over the lateral surfaces of thecovering members 20 and over the support member S2, as well as over theplurality of electrodes 10 b and upper surfaces of the covering members20 (i.e., electrode formation surfaces). Examples of the method forforming the metal layer on the lateral surfaces of the covering member20 in this way include CVD method, ALD method, a sputtering method, anda vapor deposition method.

Then, as shown in FIG. 15D, a portion of the metal layer 150 locatedover a region between the pair of electrodes 10 b and a portion of themetal layer 150 located over the support member S2 are irradiated withlaser light. That is, the portion of the metal layer 150 in the regionsto be removed is irradiated with the laser light. Thus, as shown in FIG.15E, the external connection electrodes 50 each connected to respectiveone of the plurality of electrodes 10 b in the light emitting element10.

In the case in which light emitting elements are arranged in row andcolumn, for example, an intermediate member can also be cut in a rowdirection while not cut in a column direction. The light emitting device6 shown in FIG. 14B has a rectangular shape in a plan view and has fourlateral surfaces. The intermediate member 61 includes a pair of lateralsurfaces on which the external connection portions 50 d are disposed anda pair of lateral surfaces on which the external connection electrodesare not disposed.

As shown in FIG. 15C, the pair of lateral surfaces having the externalconnection electrodes 50 d are the surfaces that are cut before formingthe metal layer 150 that is configured to serve as the externalconnection electrodes 50 d. Meanwhile, the lateral surfaces on which theexternal connection electrodes are not disposed are surfaces that arecut after forming the metal layer 150. As described above, theintermediate member is obtained before forming the metal layer 150, bycutting at certain predetermined positions (for example, in a rowdirection) so that the covering member is kept in a continuous state atthe rest of the predetermined positions. Then, the metal layer 150 isformed, and cutting is carried out at the rest of the predeterminedpositions (for example, in a column direction) having the continuouscovering member. Thus, the external connection electrodes 50 d can beformed only on one pair of opposed lateral surfaces.

The intermediate member may be obtained by creating cut surfaces in boththe row and column directions. External connection electrodes may beformed using such an intermediate member. In that case, a portion of themetal layer located between the electrodes 10 b of the light emittingelement is removed by laser irradiation to divide the externalconnection electrodes into positive and negative electrodes, therebyexposing the covering member 20.

Then, the laser irradiation is subsequently performed also on thelateral surfaces of the covering member, so that the respective parts ofthe metal layer are removed. Also in the fourth embodiment, similarly tothe variant example of the first embodiment, a laser-light irradiationregion can have a width greater than the distance between the electrodes10 b of the light emitting element.

For the support member S2, a material same as the material used for thesupport member S1 used in the cutting of the intermediate member may beused, or a material different from that may be used. Unlike otherembodiments, the metal layer is formed on a surface of the supportmember S2 in the fourth embodiment.

The material for the support member S2 can be selected in accordancewith a method of removing the metal layer on the support member S2. Forexample, when removing the metal layer on the support member throughlaser ablation by irradiation with the laser light in the same manner asthe removal of the metal layer on the covering member 20, similarly tothe removal of the covering member 20, a material having lowerheat-dissipation properties than a metal can be used. Examples of such amaterial for the support member preferably include a resin materialsimilar to the material employed for the covering member 20, polyimide,polyethylene terephthalate (PET), polyethylene naphthalate (PEN), andpolyethersulfone (PES). The laser irradiation may not be performed inthe case where the metal layer 150 is mechanically cut between a portionon the support member S2 and a portion on the lateral surfaces of thelight emitting device 6 at the time of removing the light emittingdevice 6 from the support member S2. In that case, the above-describedresin member or a metal member can be used for the support member S2.Also in the fourth embodiment, similarly to the variant example of thefirst embodiment, a laser-light irradiation region can have a widthgreater than the distance between the electrodes 10 b of the lightemitting element.

The components used in each embodiment will be described below.

Intermediate Member

The intermediate member includes the light emitting element and thecovering member. The intermediate member can further include alight-transmissive member or the like.

Intermediate Member 11

A method of forming the intermediate member 11 used in manufacturing ofthe light emitting device 1 shown in FIG. 1 is illustrated in FIGS. 16Ato 16E. Variant examples of the intermediate member are shown in FIGS.17 and 19, and methods of manufacturing thereof are illustrated in FIGS.18A to 18E and FIGS. 20A and 20B, respectively.

FIGS. 16A to 16E are diagrams illustrating the method of manufacturingthe intermediate member 11 used in the light emitting device 1 shown inFIG. 1 in which the intermediate member includes the light emittingelements 10, the covering member 20, the first light-transmissive member30 including a wavelength-conversion member, and a secondlight-transmissive member 40 not including a wavelength-conversionmember. Illustration of the support member or the like will be omittedin these figures.

As illustrated in FIG. 16A, a plate member is provided that includes areflective covering member 210 and the first light-transmissive member30. For the covering member 210, for example, a member including about60 wt % of white titanium oxide in a silicone resin can be used.

The covering member 210 can be obtained by a method which includesmolding into a plate shape by compression molding, transfer molding,injection molding, printing, spraying, or the like, and creating aplurality of through holes in a plate-shaped body by punching or thelike. Subsequently, the first light-transmissive members are formed inthe through holes by potting, printing, spraying, or the like, so that aplate-shaped member including the covering member 210 and the firstlight-transmissive members 30 can be obtained.

Then, as shown in FIG. 16B, the liquid second light-transmissive members40 are applied onto the first light-transmissive members 30 of theplate-shaped member. The liquid second light-transmissive members 40 areformed to be separated from each other. Each second light-transmissivemember 40 can have any shape in a plan view corresponding to the shapeof the light emitting element 10.

Examples of the shape of the second light-transmissive member 40 includecircle, ellipse, square, and rectangle. The distance between theadjacent second light-transmissive members 40 can be selected asappropriate in accordance with the outer shape of the light emittingdevice 1 and the number of light emitting devices 1. The secondlight-transmissive members 40 are preferably formed to coverapproximately 70% to 150% of the areas of the first light-transmissivemembers 30 of the plate-shaped member.

Then, as shown in FIG. 16C, the light emitting element 10 is arranged oneach of the second light-transmissive members 40. When the lightemitting element 10 is arranged on each of the second light-transmissivemembers 40 in the liquid state, the second light-transmissive members 40each creeps up the lateral surface of the light emitting element 10.With this, the outer surface of the second light-transmissive member 40has a shaped to face obliquely upward. After arranging the lightemitting elements 10, the light emitting elements 10 may be pressed downas needed. The second light-transmissive members 40 in the liquid stateare heated after arranging the light emitting elements 10, so thathardened second light-transmissive members 40 can be obtained.

Although the second light-transmissive member 40 disposed between thelight emitting element 10 and the first light-transmissive member 30 isnot shown in the figures, the second light-transmissive member in theform of a thin film is present between the light emitting element 10 andthe first light-transmissive member 30, and also serves as an adhesivebetween the plate-shaped member and the light emitting element 10.

Then, as shown in FIG. 16D, a covering member 220 is arranged on anupper surface of the plate-shaped member so as to cover the lightemitting elements 10 and the second light-transmissive members 40. Thecovering member 220 is arranged to integrally cover the plurality oflight emitting elements 10. The covering member 220 in use can be, forexample, a member including about 60 wt % of white titanium oxide in asilicone resin. The covering member 220 can be obtained by a method suchas compression molding, transfer molding, injection molding, printing,or spraying.

After hardening the covering member 220, as shown in FIG. 16E, thecovering member 220 is thinned by a well-known processing method so asto expose the electrodes 10 b of each of the light emitting elements 10.In this manner, the intermediate member 11 can be obtained.

In the above-described manufacturing method, the intermediate member 11in which the covering member 20 is made of two parts has been described.That is, the covering member 210 covering the lateral surfaces of eachof the first light-transmissive member 30 and the covering member 220covering the lateral surfaces of each of the light emitting elements 10(in detail, the lateral surfaces of each of the secondlight-transmissive members) are formed in different steps. The coveringmember 20 may be formed in two or more different steps in this way, ormay be formed in a single step.

Intermediate Member 71

A light emitting device 7 shown in FIG. 17 differs from the lightemitting device 1 described in the first embodiment in that the firstlight-transmissive member 30 is provided over the entire upper surfaceof the light emitting device 7. In FIGS. 18A to 18E, a method ofmanufacturing an intermediate member 71 to obtain such a light emittingdevice 7 is illustrated. Illustration of the support member is omittedin these figures.

The intermediate member 71 includes the light emitting elements 10, thecovering member 20, the first light-transmissive member 30 including awavelength-conversion member, and the second light-transmissive member40 not including a wavelength-conversion member.

As illustrated in FIG. 18A, first, the plate-shaped firstlight-transmissive member 30 is prepared. The plate-shaped firstlight-transmissive member 30 can be obtained, for example, by forming aliquid first light-transmissive member on a plate-shaped memberseparately prepared through printing, spraying, electrodeposition, etc.The term “plate shape” as used herein refers to the shape of a memberwith a large area on which a light emitting element can be arranged.

The expression “plate shape” may also be referred to as otherexpressions, including a sheet shape, a film shape, and a layer shape.

Subsequent steps after the step of applying the secondlight-transmissive member 40 in the liquid state onto the firstlight-transmissive member 30 can be performed in the same manner asthose in the intermediate member 11 as described above, and thus will beomitted hereinafter. The second light-transmissive members 40 in theliquid state are disposed to be spaced apart from each other in view ofthe size of the light emitting device and the like.

A portion of the second light-transmissive member 40 disposed betweenthe light emitting element 10 and the first light-transmissive member 30is present in the form of a thin film similarly to the intermediatemember 11, although not shown in the figures.

After hardening the covering member 20, as shown in FIG. 18E, thecovering member 20 is thinned by a well-known processing method so as toexpose the electrodes 10 b of each of the light emitting elements 10.With this manner, the intermediate member 71 can be obtained.

Intermediate Member 81

A light emitting device 8 shown in FIG. 19 does not include alight-reflective covering member, and in the light emitting device 8,the first light-transmissive member 30 is arranged not only on the uppersurface of the light emitting element, but also on the lateral surfacesof the light emitting element. That is, an intermediate member 81differs from other intermediate members in that the covering membercovering the light emitting element is light-transmissive. A method ofmanufacturing the intermediate member 81 to obtain such a light emittingdevice 8 is FIGS. 20A and 20B.

First, as shown in FIG. 20A, the light emitting elements 10 are disposedon the support member S1. At this time, the electrodes 10 b are arrangedto face the upper surface of the support member S1. Next, as shown inFIG. 20B, the first light-transmissive member 30 (and covering member20) is formed to embed the light emitting elements 10. Thereafter, thesupport member S1 is removed, so that the intermediate member 81 can beobtained. In the case in which a material that can be easily oxidized isemployed for the electrodes 10 b, in the intermediate member 81 obtainedin this manner, the surface of the electrodes 10 b is preferablyprocessed by grinding or the like after removing the support member S1.For example, in the case where Cu is used as the material for theelectrodes 10 b, surfaces of the electrodes 10 b may be oxidized bybeing subjected to a heating process. In such a case, preferably, theoxidized surface of the intermediate member 81 is removed by grinding orthe like to expose Cu, and then the metal layer is formed thereon.

For the intermediate member, the intermediate member 11, 71, or 81described above, or an intermediate member obtained by removing a secondlight-transmissive member from the intermediate member 11 or 71 can beemployed.

Light Emitting Element

For the light emitting element, for example, a semiconductor lightemitting element such as a light-emitting diode configured to emitvisible lights such as blue, green, or red light can be used. Thesemiconductor light emitting element includes a layered structure bodyincluding a light-emission layer and electrodes. The layered structureincludes a surface on which the electrodes are formed (i.e., electrodeformation surface) and a light extraction surface opposing the electrodeformation surface.

The layered structure body includes semiconductor layers that includethe light-emission layer. Furthermore, the layered structure may includea light-transmissive substrate made of sapphire. An example of thesemiconductor layered body can include three kinds of semiconductorlayers, namely, a first conductive-type semiconductor layer (e.g.,n-type semiconductor layer), the light-emission layer (active layer),and a second conductive-type semiconductor layer (e.g., p-typesemiconductor layer). The semiconductor layers that can emit ultravioletlight or visible lights in a range of blue light to green light can bemade of, for example, semiconductor materials such as Group III-Vcompound semiconductors. More specifically, nitride-based semiconductormaterials such as In_(x)Al_(y)Ga_(1-x-y)N (0≤X, 0≤Y, X+Y≤1) can be used.Examples of the semiconductor layered body that can emit red lightinclude GaAs, GaAlAs, GaP, InGaAs, and InGaAsP.

Each of the light emitting elements includes a plurality of electrodesarranged at the same surface side (i.e., on the electrode formationsurface) of the layered structure body. The plurality of electrodes mayeach have a single-layer structure or a multilayered structure that canbe in ohmic contact with the layered structure body so as to exhibitlinear or substantially linear current-voltage characteristics. Suchelectrodes can be formed to have any appropriate thickness using thematerial and structure known in the related art. For example, theelectrode preferably has a thickness of about a dozen μm to 300 μm. Theelectrodes can each be made of a good electrical conductor.

A metal such as Cu can be suitably used for each of the electrodes. Theshape of each of the electrodes can be selected from various shapes inaccordance with the purpose, application, and the like. For example, asin a light emitting device 9 shown in FIG. 21, the electrodes 10 b ofthe light emitting element can have shapes different from each other.

Metal Layer

The metal layer is a film that is formed to mainly prevent the corrosionand oxidation of the surface of each of the electrodes. A materialhaving good resistance against corrosion and oxidation compared to theelectrodes can be selected for a material of the metal layer. Forexample, the outermost surface layer of the metal layer is preferablymade of a platinum-group metal such as Au or Pt. In the case in whichthe metal layer covers a surface of the light emitting device to besoldered, gold (Au), which has good solderability, is preferably usedfor the outermost surface of the metal layer.

The metal layer may be made of one layer of a single material, or mayhave a layered structure made of different material layers.Particularly, the metal layer having a high melting point is preferablyused. Examples of the material used for this metal layer can include Ru,Mo, and Ta.

Arranging such a high-melting point metal between the electrode andoutermost surface layer of the light emitting element allows the metallayer to serve as a diffusion-prevention layer that can reduce diffusionof Sn included in solder onto the electrode or a layer close to theelectrodes. Examples of the layered structure including such a diffusionprevention layer include Ni/RuAu and Ti/Pt/Au. The diffusion preventionlayer (made of, e.g., Ru layer) preferably has a thickness in a range ofapproximately 10 Å to 1,000 Å.

The thickness of the metal layer can be variously selected. Morespecifically, the thickness of the metal layer can be in a range thatallows for selectively causing laser ablation such as, preferably, 1 μmor less, and more preferably 1,000 Å or less. Furthermore, the metallayer preferably has a thickness that allows for reducing corrosion ofthe electrode such as 5 nm or more. Here, in the case where a pluralityof metal layers is layered, the expression “thickness of the metallayer” as used herein refers to the total thickness of the plurality oflayers.

Covering Member

For the covering member, a resin member that mainly contains athermosetting resin such as a silicone resin, a modified silicone resin,an epoxy resin, or a phenol resin as a main component is preferablyused.

In the case where the covering member has a shape as that in theintermediate member 11, 61, or 71, the covering member is preferably alight-reflective resin member. The term “light-reflective resin” as usedherein refers to a resin material having a reflectance of 70% or higherwith respect to light emitted from the light emitting element. Forexample, white resin or the like is preferable. The light reaching thecovering member is reflected by the covering member to propagate towardthe light-emission surface of the light emitting device, which allowsfor increasing light extraction efficiency of the light emitting device.In the case where the covering member has a shape as that in theintermediate member 81, the covering member is preferably alight-transmissive resin member. In this case, for the covering member,a material similar to the material used for the light-transmissivemember to be described below can be used.

The light-reflective resin in use can be, for example, alight-transmissive resin in which a light-reflective substance isdispersed. Examples of a material suitable for the light-reflectivesubstance include titanium oxides, silicon oxides, zirconium oxides,potassium titanates, aluminum oxides, aluminum nitrides, boron nitrides,and mullites. A particle shaped, fiber shape, thin-plate shape, or thelike may be employed for the shape of the light-reflective material.

In particular, with the light-reflective material having a fiber shape,the effect of reducing the thermal expansion rate of the covering membercan be expected, and thus is preferable.

For example, in the case where the covering member 20 is made of a resinmember containing a filler such as the light-reflective substance, aresin component on the surface irradiated with the laser light isremoved by laser ablation, so that the filler is exposed at the surfaceof the covering member. By continuously or sequentially transferring theirradiation spot of laser light over the surface, a stripe-shaped groovecan be formed in the movement direction. The groove is formed, forexample, with a width of approximately 10 to 100 μm, typically 40 μm,and with a depth of 0.1 to 3 μm, according to the diameter of theirradiation spot of the laser light.

Light-Transmissive Member

The light-transmissive member covers the upper surface of the lightemitting element (i.e., the surface opposing the electrode formationsurface and serving as the light-emission surface), the lateral surfacesof the light emitting element, and the like. A light-transmissive resin,glass, or the like can be used for a light-transmissive material of thelight-transmissive member. In particular, a light-transmissive resin ispreferably used. Examples of such a light-transmissive resin include athermosetting resin such as silicone resin, modified silicone resin,epoxy resin, and phenolic resin, and thermoplastic resin such aspolycarbonate resin, acrylic resin, methylpentene resin, andpolynorbornene resin. In particular, a silicone resin, which has goodlight resistance and heat resistance, is preferable.

The light-transmissive member may include a phosphor as thewavelength-conversion member, in addition to the above-describedlight-transmissive material. For the phosphor, a phosphor that can beexcited with light emitted from the light-emitting element. Examples ofthe phosphor that can be excited with the light from a bluelight-emitting element or an UV light-emitting element can include anyttrium aluminum garnet based phosphor activated with cerium (YAG:Ce), alutetium aluminum garnet based phosphor activated with cerium (LAG:Ce),a nitrogen-containing calcium aluminosilicate based phosphor(CaO—Al₂O₃—SiO₂) activated with europium and/or chromium, a silicatebased phosphor ((Sr, Ba)₂SiO₄) activated with europium, nitride basedphosphors such as β-sialon phosphors, CASN based phosphors, and SCASNbased phosphors, KSF based phosphors (K₂SiF₆:Mn), sulfide basedphosphors, and quantum-dot phosphors. The combination of these phosphorsand the blue-light emitting element or UV-light emitting element allowsfor manufacturing light emitting devices configured to emit variouscolors (e.g., a light emitting device for emitting white-based light).

Various kinds of fillers and the like may be included in thelight-transmissive member for the purpose of adjusting its viscosity.

As shown in FIG. 1C, the light emitting device may include the firstlight-transmissive member including the wavelength conversion member onthe light-emission surface of the light emitting element (i.e., on thesurface opposing the surface provided with the electrodes) and thesecond light-transmissive member not including the wavelength-conversionmember on the lateral surfaces of the light emitting element. In such acase, a light-transmissive material same as the light-transmissivematerial described above can be used, while the first light-transmissivemember and the second light-transmissive member are different from eachother in whether or not containing the wavelength-conversion member. Thelight-transmissive material used in the first light-transmissive membermay be the same or different from the light-transmissive material usedin the second light-transmissive member. The above-described phosphorscan be used for the wavelength-conversion member included in the firstlight-transmissive member.

While some embodiments according to the present invention have beenexemplified above, it is apparent that the present invention is notlimited to the above-mentioned embodiments and can have any form withoutdeparting from the scope of the present invention.

DESCRIPTION OF REFERENCE NUMERALS

-   1, 2, 3, 4, 5, 6, 7, 8, 9, 1 a: Light emitting device-   11, 31, 61, 71, 81: Intermediate member-   10: Light emitting element-   10 a: Layered structure body-   10 b: Electrode-   20, 210, 220: Covering member-   30: First light-transmissive member-   40: Second light-transmissive member-   50, 50 a, 50 b, 50 c, 50 d: External connection electrode-   501: Recess of external connection electrode-   150, 250: Metal layer-   S1, S2: Support member-   L1, L2, L3, L4: Laser-light irradiation region

What is claimed is:
 1. A light emitting device comprising: a lightemitting element that comprises a first electrode and a second electrodelocated at a lower surface of the light emitting element; a coveringmember having an upper surface, a lower surface, and a plurality oflateral surfaces extending from the upper surface to the lower surface,wherein the covering member covers the light emitting element such thatat least a portion of a lower surface of each of the first electrode andthe second electrode is exposed from the lower surface of the coveringmember and such that the lower surface of the covering member is flushwith the exposed portion of the lower surface of each of the firstelectrode and the second electrode; first and second metal layers, eachof which covers and directly contacts (i) the exposed portion of thelower surface of a respective one of the first and second electrodes,(ii) a respective portion of the lower surface of the covering memberthat is flush with the exposed portion of the lower surface of each ofthe first electrode and the second electrode, and (iii) at least one ofthe lateral surfaces of the covering member.
 2. The light emittingdevice according to claim 1, wherein: the plurality of lateral surfacesof the covering member includes a first lateral surface, a secondlateral surface opposite the first lateral surface, a third lateralsurface, and a fourth lateral surface opposite the third lateralsurface; the first metal layer is disposed on the first lateral surfaceof the covering member, the second metal layer is disposed on the secondlateral surface of the covering member.
 3. The light emitting deviceaccording to claim 2, wherein: a portion of the lower surface of thecovering member located between the lower surfaces of the firstelectrode and the lower surface of the second electrode is exposed fromthe first and second metal layers.
 4. The light emitting deviceaccording to claim 1, wherein: the first and second metal layers are notdisposed on at least one of the lateral surfaces of the covering member.5. The light emitting device according to claim 1, wherein: a distancebetween the first metal layer and the second metal layer is larger thana distance between the first electrode and the second electrode of thelight emitting element.
 6. The light emitting device according to claim1, wherein: each of the first metal layer and the second metal layer hasa thickness in a range of 10 Å to 1,000 Å.
 7. The light emitting deviceaccording to claim 1, wherein each of the first metal layer and thesecond metal layer includes a plurality of layers.
 8. The light emittingdevice according to claim 1, wherein the covering member has a groove.9. The light emitting device according to claim 1, further comprising: afirst light-transmissive member covering an upper surface of the lightemitting element; and a second light-transmissive member coveringlateral surfaces of the light emitting element, wherein the coveringmember covers lateral surfaces of the second light-transmissive member.10. The light emitting device according to claim 9, wherein the coveringmember directly contacts the lateral surfaces of the secondlight-transmissive member.